Electronic structure regulation of an ultra-thin MOF-derived NiSe<sub>2</sub>/NiS<sub>2</sub>@NC heterojunction for promoting the hydrogen evolution reaction
نویسندگان
چکیده
A Ni-MOF is used as a precursor to synthesize NiSe 2 /NiS @NC heterojunction with rich phase interfaces through selenization/sulfurization process. Overpotentials of 188 mV and 211 are achieved in acidic alkaline media at 10 mA cm −2 .
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ژورنال
عنوان ژورنال: Materials advances
سال: 2022
ISSN: ['2633-5409']
DOI: https://doi.org/10.1039/d1ma01168e